page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures complimen t a r y to pxt 8 0 5 0 collector current: i c = 1 .5a marking : y 2 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo - 40 v col l ector - emitter v o l t age v ceo - 25 v emitter - base v o l t a g e v ebo - 5 v col l ector cur re n t - conti n u o us i c - 1500 m a col l ector p o w e r dissi p a t i on p c 1000 m w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 - 150 electrical characteristics (tamb =25 unless otherwise specified) p a r a m e ter s y mbol t es t c onditi o ns m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 100 a, i e =0 - 40 v collector - emitter bre a kd o w n v ol t age v ceo i c = 0.1ma, i b =0 - 25 v emitter - base breakd o w n v o l t age v ebo i e = 100 a, i c =0 - 5 v collector cut - off current i cbo v cb = 40 v , i e =0 - 0.1 a collector cut - off current i ceo v ce = 20 v , i b =0 - 0.1 a emitter cut - off current i ebo v eb = 5 v , i c =0 - 0.1 a dc c urr e nt gain h fe(1) v ce = - 1 v , i c = - 100 ma 85 400 h f e(2) v ce = - 1 v , i c = - 800 ma 50 collector - emitter satu r ation v o l t age v ce (sat) i c = - 8 00ma, i b = - 8 0ma - 0.5 v base - emitter saturation v ol t age v be (sat) i c = - 80 0ma, i b = - 8 0ma - 1.2 v base - emitter v ol t age v be v ce = - 1 v , i c = - 10ma - 1 v base - emitter posit i v e f a v or v o l t age v be f i b = - 1 a - 1. 5 v transition frequency f t v ce = - 10v,i c = - 50ma,f=30mhz 100 mhz output capacitance c ob v cb = - 10 v ,i e = 0 ,f = 1 mhz 20 pf classification of hfe rank b c d d1 range 85 - 160 120 - 200 160 - 300 300 - 400 1. base 2. collecto sot - 89 3. emitter ( pn p ) PXT8550
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteristics PXT8550
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